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Passive Q-Switch V:YAG Crystal

 

The crystals of Yttrium-Aluminum Garnet (YAG) doped with three-valence vanadium V3+ in tetrahedral position is relatively new material for passive Q-switching. V:YAG has working as efficient Q-switch for lasers operating in the 1.0~1.5 µm region. The absorption band between 1.0~1.5 µm is attributed to 3A2 →3T2 transition of V3+ ion in tetrahedral position of garnet lattice.  Concentration of V3+ in tetrahedral position is controlled by growth and annealing conditions. The efficient Q-switching of lasers operating at both 1.064 and 1.3 micron has been obtained with a number of active mediums such as Nd:YAG, Nd:YVO4, Nd:KGd(WO4)2 under flash-lamp and laser diode pumping.

 

 

Typical Properties:

 

Properties

V3+:YAG

Wavelength (nm)

1000~1500

Initial transmittance (%)

15~95

Initial absorption coefficient (cm-1)

0.1~2.0

Ground-state absorption cross-section (cm2)

7.2 x 10-18@1.32 µm
3.0 x 10-18@1.06 µm

Optical length (mm)

0.2~5

Diameter (mm)

5~10

 

HG offer Cr:YAG Specifications

Orientation:    

The rod axis is along [111]  within5°

Aperture

2x2 ~ 10x10 mm   

Length:

0.1 ~ 12 mm

Initial transmission:  

5% ~ 99%

Angle tolerance:

Δθ< ± 0.5°; Δφ< ±0.5°

Flatness:  

λ /8 @ 633 nm

Parallelism:    

20 arc sec

Perpendicularity:

5 arc minutes

Surface finishing:    

20/10 scratch/dig to MIL-O-13830A    

Wavefront distortion:    

less than λ/8 @ 633 nm

Coating

AR/HR/PR coating upon customer’s request

Note:  When ordering v3+:YAG crystal, please specify the aperture, initial transmission(To) and coatings.

 

V:YAG crystals with various ion doped YAG diffusion bonded are also available from HG Optronics.,Inc.. Please visit here