Diffusion Bonded Crystals with High Damage Threshold

Ti:Sapphire crystal is the most widely used tunable solid-state laser material combining the supreme physical and optical properties with the extremely broad lasing range. Its lasing bandwidth can support pulses < 10fs making it the crystal of choice for femtosecond mode-locked oscillators and amplifiers. The absorption band of Ti:Sapphire centers at ~ 490 nm so it may be conveniently pumped by various laser sources such as argon ion lasers or frequency doubled Nd:YAG, Nd:YLF, Nd:YVO4 lasers at ~530nm. Laser designers are using Ti:sapphire to generate femtosecond pulses to create new industrial tools. A properly delivered femtosecond laser pulse interacts within the target leaving the surrounding area undisturbed. Newly developed femtosecond pulsed lasers micro-machine complex fine structures in glass, metal and other materials. Active waveguides can be written below the surface, integrating optical devices within the body of a substrate. Defects in photomasks can be repaired without disturbing neighbouring patterns. And it is now possible to achieve cellular resolution in vivo for medical diagnosis with femtosecond pulse lasers.

Potassium Gadolinium Tungstate (KGd(WO₄)₂) crystal is an excellent stimulated Raman laser crystal with characteristics such as a wide light transmission range, good thermal conductivity, high damage threshold, large Raman shift coefficient, and high Raman gain. It can maintain high conversion efficiency and beam quality during the Raman frequency conversion process. The KGW crystal can withstand high pump power and is suitable for pump lights of various wavelengths, making it widely used in Raman lasers, laser frequency conversion, medical imaging, photodynamic therapy, environmental monitoring, spectroscopy research, material processing, and other fields.

Sapphire window retains its high strength at high temperatures, has good thermal properties and excellent transparency. It is chemically resistant to common acids and alkali at temperatures up to 1000 °C as well as to HF below 300 °C. These properties encourage its wide use in hostile environments where optical transmission in the range from the vacuum ultraviolet to the near infrared is required.

HGO grows LBO Nonlinear crystals using flux technology. LBO crystals is an excellent nonlinear crystal.For frequency doubling(SHG),tripling(THG) of Nd:YAG,Nd:YLF,Nd:YVO4 lasers, it is one of the most useful nonlinear optical materials in ultraviolet and visible laser applications.

Invented by H.W. Dove, Dove Prisms are also known Reversion prisms.  When the prism is rotated about its length axis, the image viewed through the prism rotates at twice the prism rotation rate.  This is an unusual and sometimes useful property for special applications. Entry and exit faces are anti-reflection coated.

The Rhomboid prism application for rhomboid-prism is controlling and redirecting the optical path without affecting the image direction. They can be used to displace an optical center line for light beam folding and stereoscopic systems of different sizes.

MgF2 or Magnesium Fluoride is positive uni-axial crystal with a very high optical transmittance from the vacuum UV to IR. It is regularly used for optical elements where extreme ruggedness and durability is required. It also has a large resistance to mechanical and thermal shock, to optical radiation, and is chemically stable, making it a very useful materials for UV and IR optics.

Silicon is used as an optical window primarily in the 3 to 5 micron band and as a subsrate for production of optical filters and windows.     Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns. To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (P-type) and phosphorus (N-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.