HGO grows Ho:YLF
laser crystals using Czochralski technology. Ho:YLF is a very attractive laser
material, because the lifetime of the upper laser level is much longer ( ~ 14
ms) than in Ho:YAG and the emission cross sections are higher. Additionally the
thermal lens in Ho:YLF is much weaker, which helps to generate diffraction
limited beams even under intense end-pumping.
The primary
advantage of directly pumping the Ho 5I7 is that it does not have to depend on energy
transfer, which lends itself to various radiative and non-radiative losses.
Up-conversion losses that have deleterious effect in high-energy Q-switched
lasers are eliminated.
Product Origin:
ChinaShipping Port:
Fuzhou, ChinaLead Time:
3-4weeksDescriptions:
HGO grows Ho:YLF crystal Holmium-doped Yttrium Lithium Fluoride . Ho:YLF is a very attractive laser material, because the lifetime of the upper laser level is much longer ( ~ 14 ms) than in Ho:YAG and the emission cross sections are higher. Additionally the thermal lens in Ho:YLF is much weaker, which helps to generate diffraction limited beams even under intense end-pumping.
Optical and physical properties of Ho:YLF crystal
Absorption peak wavelength |
1940nm |
Absorption cross-section at peak |
1,2×10-20 cm2 |
Absorption bandwidth at peak wavelength |
~18 nm |
Laser wavelength |
2060 nm |
Lifetime of 5I7 energy level |
10 ms |
Emission cross-section |
1,8×10-20 cm2 |
Refractive index @1064 nm |
no=1,448, ne=1,470 |
dn/dT |
-4,6 × 10-6 (||c) K-1, -6,6 × 10-6 (||a) K-1 |
Thermal expansion coefficient |
10,1 × 10-6 (||c) K-1, 14,3 × 10-6 (||a) K-1 |
Thermal Conductivity /(W·m-1·K-1) |
6 Wm-1K-1 |
Crystal structure |
tetragonal |
Melting Point |
819°C |
Density |
3.95 g/cm3 |
Mohs hardness |
5 |
Typical doping level |
0.5-1% |
HGO offers Pr:YLF specifications:
Doping(atm%): |
0.5% ~ 1% |
Orientation: |
a-cut/c-cut crystalline direction |
Wavefront Distortion: |
λ/4per inch @ 632.8 nm |
Dimension Tolerances: |
+0.0/-0.05 mm , Length: ±0.1 mm |
Surface Quality: |
10/5 Scratch/Dig MIL-O-1380A |
Parallelism: |
< 10″ |
Perpendicularity: |
< 5′ |
Clear Aperture: |
> 90% |
Surface Flatness: |
< λ/10 @ 632.8 nm |
Chamfer: |
< 0.1 mm @ 45o |
Barrel Finish |
50-80 micro-inch (RMS) , |
Size |
Upon customer request |
Coating |
AR/HR/PR coating upon customer’s request |
Damage Threshold |
750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz |
Quality Warranty Period |
One year under proper use |
Other YLF-based Nd/Pr/Tm/Yb/Er/Ce YLF are also available upon request.
Advantages:
1) Long upper laser level lifetime ~ 15 ms
2) Higher emission cross-section
3) Low dn/dT –> weak thermal lensing
4) Highest (to the best of our knowledge) CW output of 21 W for 2-μm Ho:YLF laser
5) Efficient Q-switched operation (up to 37 mJ per pulse)
Why Choose HGO ?
HG OPTRONICS.,INC. grow YLF-based crystals in house using CZ growth technology. The use of high quality starting materials for crystal growth, whole boule interferometry, precise inspection of scattering particle in crystal using He-Ne laser and delicated measurement of bulk losses using spectrophotometer assures that each crystal will comply with customer’s specification and perform well.
And base on our diffusion bonding technology various YLF-based configurations are availabl to supply,