Ti:Sapphire
crystal is the most widely used tunable solid-state laser material combining
the supreme physical and optical properties with the extremely broad lasing
range. Its lasing bandwidth can support
pulses < 10fs making it the crystal of choice for femtosecond mode-locked oscillators and amplifiers. The absorption band of Ti:Sapphire centers at ~ 490 nm so it may be conveniently pumped by various laser sources such as argon ion lasers or frequency doubled Nd:YAG, Nd:YLF, Nd:YVO4 lasers at ~530nm.
Laser designers
are using Ti:sapphire to generate femtosecond pulses to create new industrial
tools. A properly delivered femtosecond laser pulse interacts within the target
leaving the surrounding area undisturbed. Newly developed femtosecond pulsed
lasers micro-machine complex fine structures in glass, metal and other
materials. Active waveguides can be written below the surface, integrating
optical devices within the body of a substrate. Defects in photomasks can be
repaired without disturbing neighbouring patterns. And it is now possible to
achieve cellular resolution in vivo for medical diagnosis with femtosecond
pulse lasers.
Product Origin:
ChinaShipping Port:
Fuzhou, ChinaLead Time:
3-4weeksDescriptions:
Ti:Sapphire Crystal Titanium Doped Sapphire is the most widely used tunable solid-state laser material. Its lasing bandwidth can support pulses < 10fs making it the crystal of choice for femtosecond mode-locked oscillators and amplifiers. The absorption band of Ti:Sapphire centers at ~ 490 nm so it may be conveniently pumped by various laser sources such as argon ion lasers or frequency doubled Nd:YAG, Nd:YLF, Nd:YVO4 lasers at ~530nm.
Applications:
1) Femtosecond Pulse Laser Material.
2) Tunable Output - 650 nm to 1100 nm.
3) Excellent Output Efficiency
4) Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193 nm ) laser with ultrafast pulses below 10fs.
5) Ti:Sapphire is also widely used as the pump source of OPOs to expand the tunable range.
Optical and spectral properties of Tisapphire
Absorption range |
400 - 600 nm |
Tuning range |
660 - 1050 nm |
Emission peak |
795 nm |
Absorption peak |
488 nm |
Absorption cross-section at peak wavelength |
38×10-20 cm2 |
Emission Cross-section |
Σ532nm = 4.9 x 10-20 cm2 |
Emission Cross-section |
Σ490nm = 6.4 x 10-20 cm2 |
Emission cross-section |
Σ790nm = 41×10-20 cm2 |
dn/dT |
13×10-6 K-1 |
Thermal conductivity |
33 Wm-1K-1 |
Laser action |
4-level vibronic |
Fluorescence lifetime |
3.2 µs (T=300K) |
Refractive index |
1.76 @ 800 nm |
Chemical formula |
Ti3+:Al2O3 |
Crystal structure |
Hexagonal a=4.758, c=12.991 |
Density |
3.98 g/cm3 |
Melting point |
2040℃ |
Mohs hardness |
9 |
HGO offers Tisapphire specifications:
Orientation: |
Optical axis C normal to rod axis |
Ti2O3 concentration: |
0.03 - 0.25wt % |
Figure Of Merit (FOM): |
100~250 Upon customers request |
End configurations: |
Flat/Flat or Brewster/Brewster ends |
Flatness: |
l /8 ~1/10@ 633 nm |
Parallelism: |
10 arc sec |
Surface finishing: |
10/5 scratch/dig to MIL-O-13830A |
Clear Aperture: |
> 90% |
Chamfer: |
< 0.1 mm @ 45deg. |
Size |
Upon customer request |
Coating |
AR/HR coating upon customer’s request |
Damage Threshold |
750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz |
Quality Warranty Period |
One year under proper use |
Why Choose HGO ?
HG OPTRONICS.,INC. supplies very high quality of Titanium doped sapphire laser crystals. Based on HGO’s high processing techniques, high precision Ti-sapphire with high surface quality and as high as 1/10 flatness is available. The crystals are available in sizes from 2mm to 60mm diameter or diagonal dimension and with path length from 2mm to over 100mm long.
What is more, Tisapphire based diffusion bonding configurations are also vailable to supply especially in the form of pure sapphire /Tisapphire diffusion bonding.