HGO grows Tm:YLF
laser crystals using Czochralski technology. Tm:YLF is an important middle
infrared laser crystal. Because Tm:YLF is negative uniaxial crystal, whose
thermal refractive index coefficient is negative, some thermal distortion may
be counteracted and high-quality light can be output. Conveniently pumped at
792nm, 1.9μm linearly polarized beam is output in a axis, and non-linearly
polarized beam is output in c axis. The YLF crystals has low non-linear
refraction index value and thermo optical constants, which makes these crystals
applicable in research, development, education, production, photonics, optic,
laser technology and telecommunications.
Besides, Tm3+:YLF lasers are
ideal pump sources for 2.1 μm Ho3+:YAG lasers. This is due to a good overlap of Tm3+:YLF emission and Ho3+:YAG absorption
spectra and the capacity of producing linearly polarized output. What is more,
the refractive index of Tm3+:YLF decreases with temperature, leading to a negative
thermal lens that is partly compensated by a positive lens effect due to end
face bulging.
Product Origin:
ChinaShipping Port:
Fuzhou, ChinaLead Time:
3-4weeksDescriptions:
HGO grows Tm:YLF crystal Thulium-doped Yttrium Lithium Fluoride. Tm:YLF is an important middle infrared laser crystal. Conveniently pumped at 792nm, 1.9μm linearly polarized beam is output in a axis, and non-linearly polarized beam is output in c axis.
Optical and physical properties of Tm:YLF crystal
Absorption peak wavelength |
792 nm |
Absorption cross-section at peak |
0,55 × 10-20 cm2 |
Absorption bandwidth at peak wavelength |
16 nm |
Laser wavelength |
1900 nm |
Lifetime of 3F4 energy level |
16 ms |
Emission cross-section@1900 nm |
0,4 × 10-20 cm2 |
Refractive index @1064 nm |
no=1,448, ne=1,470 |
dn/dT |
π = 4.3 x 10-6 x °K-1; σ = 2.0 x 10-6 x °K-1 |
Thermal expansion coefficient(10-6·K-1@25°C ) |
10.1×10-6 (//c) K-1, 14.3×10-6((//a) K-1 |
Thermal Conductivity /(W·m-1·K-1) |
6 Wm-1K-1 |
Crystal structure |
tetragonal |
Melting Point |
819°C |
Density |
3.99 g/cm3 |
Mohs hardness |
5 |
Shear Modulus /Gpa |
85 |
Specific Heat |
0.79 J/gK |
Poisson Ratio |
0.3 |
Typical doping level |
2-4% |
HGO offers Tm:YLF specifications:
Doping(atm%): |
2% ~ 12% |
Orientation: |
a-cut/c-cut crystalline direction |
Wavefront Distortion: |
λ/4per inch @ 632.8 nm |
Dimension Tolerances: |
+0.0/-0.05 mm , Length: ±0.1 mm |
Surface Quality: |
10/5 Scratch/Dig MIL-O-1380A |
Parallelism: |
< 10″ |
Perpendicularity: |
< 5′ |
Clear Aperture: |
> 90% |
Surface Flatness: |
< λ/10 @ 632.8 nm |
Chamfer: |
< 0.1 mm @ 45o |
Barrel Finish |
50-80 micro-inch (RMS) , |
Size |
Upon customer request |
Coating |
AR/HR/PR coating upon customer’s request |
Damage Threshold |
750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz |
Quality Warranty Period |
One year under proper use |
Other YLF-based Nd/Pr/Ho/Yb/Er/Ce YLF are also available upon request.
Advantages:
1) Linearly polarized output beam
2) Little heat effect while lasering
3) Effective cross relaxing of Tm ions
4) High efficiency with LD pumping
5) Low nonlinear refractive index
6) Low thermo-optical constant
7) Low polarization loss
8) Long upper energy level fluorescence lifetime
9) Small up-conversion effect
10) No absorption loss of sensitized ions
Why Choose HGO ?
HG OPTRONICS.,INC. grow YLF-based crystals in house using CZ growth technology. The use of high quality starting materials for crystal growth, whole boule interferometry, precise inspection of scattering particle in crystal using He-Ne laser and delicated measurement of bulk losses using spectrophotometer assures that each crystal will comply with customer’s specification and perform well.
And base on our diffusion bonding technology various YLF-based configurations are availabl to supply.