HGO grows Pr:YLF laser crystals using Czochralski technology. Pr3+:YLF has been
found as promising laser material for producing visible lasers directly and UV
lasers through intracavity second-harmonic generation. Very few laser materials have the necessary properties for the realization
of lasing in the visible spectral range. Trivalent praseodymium (Pr3+)
is known to be an interesting laser ion for use with solid-state lasers in the
visible spectral range because of its energy levels scheme, providing several
transitions in the red (640 nm, 3P0 to 3F2), orange (607
nm, 3P0 to 3H6), green (523 nm, 3P0 to 3H5), and
dark red (720 nm, 3P0 3F3+3F4) spectral regions.
Product Origin:
ChinaShipping Port:
Fuzhou, ChinaLead Time:
3-4weeksDescriptions:
HGO grows Pr:YLF crystals Protactinium -doped Yttrium Lithium Fluoride crystals. Pr3+:YLF has been found as promising laser material for producing visible lasers directly and UV lasers through intracavity second-harmonic generation. Very few laser materials have the necessary properties for the realization of lasing in the visible spectral range.
Optical and physical properties of Pr:YLF crystal
Absorption peak wavelength |
444 nm |
Absorption cross-section at peak |
8 × 10-20 cm2 |
Absorption bandwidth at peak wavelength |
~5 nm |
Laser wavelength |
523 nm, 607 nm, 639 nm, 698 nm, 721 nm |
Lifetime of 3P0 energy level |
50 μs |
Emission cross-section |
20 × 10-20 cm2 |
Refractive index @1064 nm |
no=1,448, ne=1,470 |
dn/dT |
-5,2 × 10-6 (||c) K-1, -7,6 × 10-6 (||a) K-1 |
Thermal expansion coefficient |
~16 × 10-6 K-1 |
Thermal Conductivity /(W·m-1·K-1) |
6 |
Crystal structure |
tetragonal |
Lattice Constants |
a=5.164, c=10.732 Å |
Melting Point |
819°C |
Density |
3,95 g/cm3 |
Mohs hardness |
5 |
Typical doping level |
<1 at.% |
HGO offers Pr:YLF specifications:
Doping(atm%): |
0.1% ~ 2% |
Orientation: |
a-cut/c-cut crystalline direction |
Wavefront Distortion: |
λ/4per inch @ 632.8 nm |
Dimension Tolerances: |
+0.0/-0.05 mm , Length: ±0.1 mm |
Surface Quality: |
10/5 Scratch/Dig MIL-O-1380A |
Parallelism: |
< 10″ |
Perpendicularity: |
< 5′ |
Clear Aperture: |
> 90% |
Surface Flatness: |
< λ/10 @ 632.8 nm |
Chamfer: |
< 0.1 mm @ 45o |
Barrel Finish |
50-80 micro-inch (RMS) , |
Size |
Upon customer request |
Coating |
AR/HR/PR coating upon customer’s request |
Damage Threshold |
750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz |
Quality Warranty Period |
One year under proper use |
Other YLF-based Nd/Ho/Tm/Yb/Er/Ce YLF are also available upon request.
Advantages:
1) High absorption and emission cross-sections(~10-19cm2)
2) Good overlapping of the absorption band in the blue spectral region with the emission
of the InGaN laser diodes and 2ω-OPSL
3) Diode-pumped solid-state lasers for precise and efficient processing of metals such as copper or gold, entertainment industry and science
Why Choose HGO ?
HG OPTRONICS.,INC. grow YLF-based crystals in house using CZ growth technology. The use of high quality starting materials for crystal growth, whole boule interferometry, precise inspection of scattering particle in crystal using He-Ne laser and delicated measurement of bulk losses using spectrophotometer assures that each crystal will comply with customer’s specification and perform well.
And base on our diffusion bonding technology various YLF-based configurations are availabl to supply,